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A voltage-controlled resistor in CMOS technology using bisection of the voltage range

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2 Author(s)
N. Tadic ; Dept. of Electr. Eng., Univ. of Montenegro, Yugoslavia ; D. Gobovic

A voltage-controlled, linear, nongrounded resistor in CMOS technology is presented. It is based on the conversion of the transconductance of the MOSFET in the saturated region to the drain-to-source resistance of the MOSFET in the nonsaturated region. A new approach to the realization of the known linearization technique is applied. Bisection of the input voltage of the controlled resistor is involved in this technique. Simulation results have shown a linearity error less than 0.58% of full scale in the 0 V to 7 V input voltage range

Published in:

IEEE Transactions on Instrumentation and Measurement  (Volume:50 ,  Issue: 6 )