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An improved low power CMOS readout circuit for focal plane array

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5 Author(s)
Chen Zhongjian ; Inst. of Microelectron., Peking Univ., Beijing, China ; Li Xiaoyong ; Ji Lijiu ; Han Jianzhong
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An improved low power CMOS snapshot readout structure called OESCA (Odd-Even Snapshot Charge Amplifier) for focal plane array (FPA) is presented in this paper. Using two low power charge amplifiers as column readout circuit (one is for the odd-row readout and the other is for the even-row), this structure not only can eliminate the influence of column bus parasitic capacitance, but also can save 15% power dissipation of the column readout stage. The pixel circuit includes only three NMOSFETs. Thus, it is very suitable for large-format small-pixel lower-power readout circuit. An experimental 64×64 OESCA chip has been fabricated with 1.2-μm Double-Poly Double-Metal (DPDM) n-well CMOS technology. The charge handling capacity is 10.37 pC with pixel size 50×50 μm2. A description of the readout circuit structure, pixel circuit, operation principle is given in detail. Both excellent simulation results and experimental results of the fabricated OESCA readout chip are presented

Published in:

ASIC, 2001. Proceedings. 4th International Conference on

Date of Conference:

2001

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