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A 0.18-μm CMOS LNAs with sub-2 dB NF and low power for Bluetooth applications

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3 Author(s)
Lin Min ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Li Yong-ming ; Chen Hong-yi

A 2.4 GHz low noise amplifier (LNA), intended for use in a Bluetooth receiver, has been designed in a standard 0.18 μm in CMOS process. The amplifier provides a forward gain (s21) of about 25 dB with a noise figure of sub-2 dB, while consuming only 16 mW power with a 1.5 V supply. It has a good linearity, with the IIP3 equal to -8 dBm around

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ASIC, 2001. Proceedings. 4th International Conference on

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