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An accurate on-wafer deembedding technique with application to HBT devices characterization

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5 Author(s)
Bousnina, S. ; Dept. de Genie Electrique et de Genie Informatique, Ecole Polytech. de Montreal, Que., Canada ; Falt, C. ; Mandeville, P. ; Kouki, A.B.
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An accurate deembedding technique for on-wafer measurements of an active device's S-parameter is presented in this paper. This deembedding technique accounts in a systematic way for effect of all parasitic elements surrounding the device. These parasitic elements are modeled as a four-port network. Closed-form equations are derived for deembedding purposes of this four-port network. The proposed deembedding technique was used to extract small-signal model parameters of a 2×25 μm emitter GaInP/GaAs heterojunction bipolar transistor device, and excellent agreement between measured and model-simulated S-parameter was obtained up to 30 GHz

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:50 ,  Issue: 2 )