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Transient effect of DC stressed dielectric breakdown in thin SiO2 films

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2 Author(s)
Toriumi, Akira ; Dept. of Mater. Sci., Tokyo Univ., Japan ; Satake, H.

A post-breakdown resistance of SiO2 has been studied as a quantitative monitor to describe the dielectric breakdown characteristics. First, the usefulness of post-breakdown SiO2 analysis is discussed on the basis of experimental results. Clear differences between dry and wet oxides or stress polarities are shown in terms of the post-breakdown resistance of SiO2 as well as the charge-to-breakdown. Then, the soft- and hard- breakdowns typically observed in sub-10 nm SiO2 are discussed qualitatively but statistically. A main point discussed is to consider a time constant in MOS closed circuit including a sample itself just at the dielectric breakdown. The results imply that the intrinsic parasitic effects become more important in modeling and assessment of scaled-down CMOS device reliability.

Published in:

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on  (Volume:2 )

Date of Conference:

22-25 Oct. 2001