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An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature

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5 Author(s)
Gui-Zhen Yan ; Inst. of Microelectron., Peking Univ., Beijing, China ; Chan, P.C.H. ; Sin, J.K.O. ; I-Ming Hsing
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This paper presents a new type of silicon based integrated gas sensor using tin oxide film, which has been successfully designed and fabricated using the surface micromachining technique. In order to find out the optimal annealing condition, the sensing films in the integrated gas sensor devices were annealed at different temperature. The annealing temperature of 700°C was the best for high sensitivity and stability of die sensing film. The grain size and atomic concentration of the tin oxide were analysed.

Published in:

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on  (Volume:2 )

Date of Conference:

22-25 Oct. 2001

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