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ICP dry etching for deep sub-micrometer vertical trench in Si and SiO2

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5 Author(s)
Wei Ke ; Microelectron. R&D Center, Acad. Sinica, Beijing, China ; Liu Xun-Chun ; Guo Xiao-Xu ; Wang Run-Mei
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Dry etching is a very important process in integrated circuit manufacture. Perfect results of etching a 154 nm trench in silicon and a 138 nm trench in silicon dioxide by a pagoda-shape ICP reactor are reported. A detail study of etching characteristics as function of gas composition, flow rate, RF power, pressure and self-bias voltage, is described

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Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on  (Volume:1 )

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