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0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer

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7 Author(s)
Bollaert, S. ; Departement Hyperfrequences et Semiconducteurs, Inst. d''Electronique et de Microelectronique du Nord, Villeneuve d''Ascq, France ; Wallaert, X. ; Lepilliet, S. ; Cappy, A.
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New In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 /spl mu/m T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current gain cutoff frequency f/sub T/ of 185 GHz is obtained. That result is the first reported for In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As TS-HEMTs on Silicon substrate.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 2 )

Date of Publication:

Feb. 2002

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