Referenced Items are not available for this document.
We report high-speed planar silicon p-i-n photodiodes fabricated on silicon-on-insulator (SOI) substrates. The devices were fabricated in standard CMOS technology with no additional fabrication steps required. The 250-nm finger-spacing devices exhibited 15- and 8-GHz bandwidths for devices processed on 200- and 2000-nm SOI substrates, respectively, at a reverse bias of -9 V. Quantum efficiencies of 12% and 2% were measured on the 2- and 0.2-μm thick SOI, respectively. The dark current was 5 pA for -3 V bias and 500 μA for -9 V bias
Published in:
Quantum Electronics, IEEE Journal of
(Volume:38
,
Issue:
2
)
Date of Publication: Feb 2002
- Page(s):
- 193 - 196
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 7180198
- Digital Object Identifier :
- 10.1109/3.980272
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Feb 2002
- Sponsored by :
- IEEE Photonics Society
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