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A partial SOI technology for single-chip RF power amplifiers

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4 Author(s)
Jun Cai ; Inst. of Microelectron., Singapore, Singapore ; Changhong Ren ; Liang, Y.C. ; Sin, J.K.O.

The technology of forming partial SOI (silicon on insulator) platform on conventional bulk wafer is proposed. RF LDMOS devices with high power-added efficiency and onchip high-Q value micro-inductors were fabricated for 2 GHz power amplifier applications by using the proposed technology. Devices were verified by the laboratory measurement results.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001