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Monte Carlo simulation of ion implantation (3-dimensional) and defect modeling during implantation process

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8 Author(s)
D. Li ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; L. Lin ; G. Wang ; Y. Chen
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In this paper, we report a new computationally efficient three-dimensional Monte Carlo simulator for ion implantation into topographically complex structures. Significant improvement of CPU time over previous simulators has been achieved. Both the Kinchin-Pease (KP) and the Kinetic Accumulative Damage Model (KADM) have been incorporated into this new simulator. Based on KADM, detailed defect information, such as cluster size, type, distribution and End-Of-Range (EOR) defects could be obtained.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001