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Monte Carlo impurity diffusion simulation considering charged species for low thermal budget sub-50 nm CMOS process modeling

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4 Author(s)
Hane, M. ; Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan ; Ikezawa, T. ; Takeuchi, K. ; Gilmer, G.H.

A Monte Carlo dopant diffusion simulation program has been developed which includes charged species, Fermi-level effects on drift-diffusion and clustering reactions. An algorithm that determines variable time steps was improved to account for all the Fermi-level dependent quantities, such as different charge states of point-defects, pairs and complexes, and different diffusivities/reaction rates for them. Simulations of two extreme low thermal budget processes, i.e. spike-anneal (>1050/spl deg/C) and low temperature (<550/spl deg/C and long time) anneal for typical sub-50 nm CMOS processes have been demonstrated by using this MC program.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001

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