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Data retention behavior of a SONOS type two-bit storage flash memory cell

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9 Author(s)
W. J. Tsai ; Macronix Int. Co., Hsin-Chu, Taiwan ; N. K. Zous ; C. J. Liu ; C. C. Liu
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Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are investigated. In erase (low-Vt) state, a threshold voltage drift with storage time is observed after P/E cycling stress. Positive trapped charge creation in the bottom oxide is found to be responsible for the drift. In program (high-Vt) state, data retention loss is attributed mostly to nitride charge escape by Frenkel-Poole emission and oxide trap assisted tunneling. A square-root dependence of the nitride charge loss on electric field is obtained. A Vg-acceleration method for retention lifetime measurement is proposed.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001