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Analytical model for failure rate prediction due to anomalous charge loss of flash memories

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9 Author(s)

Anomalous charge loss in flash memories is modeled with a percolation concept. An analytical model is constructed that relates the charge loss distribution of moving bits in flash memories with the geometric distribution of oxide traps, thus linking the phenomenological description of moving bits to physical conduction models. This model allows flash memory failure rate predictions for different oxide qualities and thicknesses.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001