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Degradation of current drivability by the increase of Zr concentrations in Zr-silicate MISFET

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3 Author(s)
Yamaguchi, T. ; Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan ; Satake, H. ; Fukushima, N.

Zr-silicate thin films with different Zr concentrations, fabricated by low impact pulsed laser ablation deposition, have identically thin interface layers and smooth Si interfaces. By using these Zr-silicate samples, the influence of Si interface properties and that of bulk charges in the Zr-silicate on current drivability were distinguished for the first time. It was found that bulk charges in the Zr-silicate dielectrics greatly affect the current drivability of MISFETs, even if the interface-state density is small.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001

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