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Zr-silicate thin films with different Zr concentrations, fabricated by low impact pulsed laser ablation deposition, have identically thin interface layers and smooth Si interfaces. By using these Zr-silicate samples, the influence of Si interface properties and that of bulk charges in the Zr-silicate on current drivability were distinguished for the first time. It was found that bulk charges in the Zr-silicate dielectrics greatly affect the current drivability of MISFETs, even if the interface-state density is small.
Date of Conference: 2-5 Dec. 2001