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16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimisation

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12 Author(s)
F. Boeuf ; STMicroelectronics, Grenoble, France ; T. Skotnicki ; S. Monfray ; C. Julien
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In nanometer MOSFETs, because of the small channel size, mesoscopic and even quantum effects can come into play. We have fabricated l6 nm NMOS devices featuring I/sub on/=400 /spl mu/A//spl mu/m and I/sub off/=0.8 /spl mu/A//spl mu/m and demonstrate that the FET principle is still confirmed at room temperature. We have deliberately used a non-overlapped SD/gate architecture, showing that, with adapted channel doping, it not only performs equally as well as the overlapped one, but also shows 1000/spl times/ reduced dispersion and is easily manufacturable. Finally, we show that quantization of energy in the channel motivates a study of performance at low temperature, and that the leading effect at low temperature and low voltage is Coulomb blockade.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001