By Topic

Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Uchida, K. ; Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan ; Koga, J. ; Ohba, R. ; Numata, T.
more authors

The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness T/sub SOI/ is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as T/sub SOI/ decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as T/sub SOI/ decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quanturn-mechanical effects.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001