Cart (Loading....) | Create Account
Close category search window
 

MOSFET design of 100 nm node low standby power CMOS technology compatible with embedded trench DRAM and analog devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

24 Author(s)
Oishi, A. ; Syst. LSI Div., Toshiba Corp., Kanagawa, Japan ; Hasumi, R. ; Okayama, Y. ; Miyashita, K.
more authors

Demonstrates an optimum design of low leakage 85nm gate CMOSFET (I/sub off//spl les/3pA//spl mu/m) for 100nm technology node. Gate dielectric module has been optimized to achieve low gate leakage, low flicker noise and sufficiently high driving current. Deep source/drain design is strongly restricted from controlling junction leakage current when integration of trench DRAM cell is considered. Especially, for nMOSFET, deep junction is formed only by using phosphorus to suppress defect creation. Short channel immunity and suppression of gate depletion are achieved simultaneously by introducing gate pre-doping technique. In addition, channel and halo profiles are optimized to reduce band-to-band tunneling (BTBT) current. As a result, we have achieved excellent performance of /spl Sigma/CV/I(=CV/I/sub dn/+CV/I/sub dp/)=10.8psec with I/sub off/=3pA//spl mu/m at V/sub dd/ of 1.2V.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.