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A technology simulation methodology for AC-performance optimization of SiGe HBTs

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4 Author(s)
Johnson, J.B. ; Microelectron. Div., IBM, Essex Junction, VT, USA ; Stricker, A. ; Joseph, A.J. ; Slinkman, J.A.

A methodology for simultaneous calibration of SiGe HBT process and device simulation is presented and applied to SiGe BiCMOS HBTs with peak cut-off frequencies ranging from 100 GHz to 200 GHz. Predictive simulation capability is demonstrated for critical HBT AC device characteristics through comparison with experimental devices.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001

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