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Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

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29 Author(s)
Yudong Kim ; Int. SEMATECH, Austin, TX, USA ; Gebara, G. ; Freiler, M. ; Barnett, J.
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Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000/spl deg/C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO/sub 2//poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO/sub 2//poly-Si transistors.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001