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A general partition scheme for gate leakage current suitable for MOSFET compact models

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5 Author(s)
Wei-Kai Shih ; Technol. CAD, Intel Corp., Santa Clara, CA, USA ; Rios, R. ; Packan, P. ; Mistry, K.
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For the first time, it is rigorously shown that the source/drain partition of gate leakage current in a MOSFET is identical to that of inversion charge. This paper provides model developers a general recipe in addressing the partition issue and enables more consistent model parameter extraction methodology for MOSFETs in sub-100 nm technology.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001

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