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A record high 150 GHz f/sub max/ realized at 0.18 /spl mu/m gate length in an industrial RF-CMOS technology

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8 Author(s)
Tiemeijer, L.F. ; Philips Res. Lab., Eindhoven, Netherlands ; Boots, H.M.J. ; Havens, R.J. ; Scholten, A.J.
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We demonstrate that by careful layout optimisation, particularly aimed at reducing the effective gate resistance, a record high maximum oscillation frequency f/sub max/ of 150 GHz can be obtained for an industrial 0.18 /spl mu/m CMOS process showing a cut-off frequency f/sub T/ of 70 GHz. A very low minimum noise figure and good suppression of the substrate noise using a guard-ring is also shown.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001

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