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Suppression of drain conductance dispersion in InP-based HEMTs for broadband optical communication systems

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5 Author(s)
Okamoto, N. ; Fujitsu Labs. Ltd., Kanagawa, Japan ; Takahashi, T. ; Imanishi, K. ; Sawada, K.
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Demonstrated InP-based HEMTs without drain conductance (g/sub d/) frequency dispersion for broadband optical communication systems. It was possible to markedly suppress the g/sub d/ dispersion by using composite channel and double-doped structures rather than a conventional HEMT structure. Furthermore, we clarified that hole generation time by impact ionization determines the frequency range of the g/sub d/ dispersion in a conventional InP-based HEMT by investigating the g/sub d/ dispersion over a wide range of frequencies (100 Hz-20 GHz).

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001

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