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Visible electroluminescence from MOS capacitors with Si-implanted SiO/sub 2/ under dynamic operation

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4 Author(s)
Matsuda, T. ; Dept. of Electron. & Informatics, Toyama Prefectural Univ., Japan ; Takata, H. ; Kawabe, M. ; Ohzone, T.

Electroluminescence (EL) under alternating-current (ac) operation is first reported for n/sup +/-polysilicon/SiO/sub 2//p-Si MOS capacitors with 50 nm Si-implanted SiO/sub 2/. Visible EL can be observed with the naked eye in the dark. The ac operation by pulse-wave distinctly enhances the EL intensity and its lifetime. The pulse frequency affects the EL spectrum and thus the EL color. A model of EL mechanism is proposed for the Si-implanted MOS EL device, which has a possibility of blue and UV light emission.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001