By Topic

Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ren, Z. ; Purdue Univ., West Lafayette, IN, USA ; Venugopal, R. ; Datta, S. ; Lundstrom, M.

The double gate (DG) MOSFET and similar structures provide the electrostatic integrity needed to scale devices to their limits. In this paper, we use a non-equilibrium Green's function (NEGF) approach to examine 10 nm-scale device design and manufacturing issues realistically. NEGF simulations are used to examine: (i) choice of body thickness, (ii) effect of body thickness variations, (iii) the required junction abruptness, (iv) sensitivity of the device to gate-S/D (source/drain) over/underlap, and (v) the impact of metal-semiconductor contact resistance. The results of this study identify key device challenges for 10 nm-scale MOSFETs.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001