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The double gate (DG) MOSFET and similar structures provide the electrostatic integrity needed to scale devices to their limits. In this paper, we use a non-equilibrium Green's function (NEGF) approach to examine 10 nm-scale device design and manufacturing issues realistically. NEGF simulations are used to examine: (i) choice of body thickness, (ii) effect of body thickness variations, (iii) the required junction abruptness, (iv) sensitivity of the device to gate-S/D (source/drain) over/underlap, and (v) the impact of metal-semiconductor contact resistance. The results of this study identify key device challenges for 10 nm-scale MOSFETs.
Date of Conference: 2-5 Dec. 2001