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Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

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6 Author(s)
Leland Chang ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Yang, K.J. ; Yee-Chia Yeo ; Yang-Kyu Choi
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The impact of energy quantization on gate tunneling current is studied for double-gate and ultra-thin body MOSFETs. The lower vertical electric field in the channel of these thin-body devices causes a reduction in gate leakage by as much as an order of magnitude. The additional effects of channel doping and high-k dielectrics are also investigated.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001