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Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

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11 Author(s)
H. Wada ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; D. I. Babic ; D. L. Crawford ; T. E. Reynolds
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Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room-temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.<>

Published in:

IEEE Photonics Technology Letters  (Volume:3 ,  Issue: 11 )