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Lossless 1×4 laser diode optical gate switch

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3 Author(s)
Terui, H. ; NTT Opto-Electron Lab., Ibaraki, Japan ; Kominato, T. ; Kobayashi, M.

The fabrication of a compact 1×4 laser diode (LD) optical gate switch for the 1.3 μm band, comprising five LD optical gate submodules and a 1×4 planar lightwave circuit, is described. The switch exhibited a lossless switching function and polarization sensitivities of 0.5-1.1 dB, with operation currents of 45 to 55 mA. At operation currents of 120 mA, the switch exhibited positive gains of 9.0 to 10.2 dB. No power penalty was detected for nonreturn-to-zero (NRZ) transmissions of up to 2 Gb/s at -10 dBm input levels, when a narrowband optical filter for spontaneous emission reduction was used

Published in:

Lightwave Technology, Journal of  (Volume:9 ,  Issue: 11 )