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Tunable barium strontium titanate thin film capacitors for RF and microwave applications

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7 Author(s)
Tombak, A. ; Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA ; Maria, J.-P. ; Ayguavives, F. ; Zhang Jin
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The measurement results for thin film barium strontium titanate (BST) based voltage tunable capacitors intended for RF applications are reported. At 9 V DC, BST capacitors fabricated using MOCVD (metalorganic chemical vapor deposition) method achieved 71% (3.4:1) tunability. The measured device quality factor (Q) for BST varactors is comparable with the device Q for commercially available varactor diodes of similar capacitance. The typical dielectric loss tangent was in the range 0.003-0.009 at VHF. Large signal measurement and modeling results for BST thin film capacitors are also presented.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:12 ,  Issue: 1 )