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Structural properties and frequency response of AlN thin film surface acoustic wave device

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2 Author(s)
Chang-Woo Nam ; Sch. of Electr. Eng., Ulsan Univ., South Korea ; Kyu-Chul Lee

An AlN thin film for SAW filter applications was deposited on (100) silicon wafers and sapphire (R-plane) by the reactive magnetron sputtering method. Structural and electrical characteristics of the AlN thin film are presented. The highly oriented (002) plane at various operating conditions was observed by XRD. AFM measurement showed that deposited thin film had a smooth surface. The cross-sectional SEM micrograph showed a well-aligned columnar structure. SAW velocity of the interdigital transducer (IDT)/AlN/Si structure was about 5040 m/s in the center frequency of 126 MHz. Insertion loss was measured to be a relatively low value of 22 dB. SAW velocity of IDT/AlN/sapphire structure was 5960 m/s in the center frequency of 297 MHz, and insertion loss was about 48 dB

Published in:

Science and Technology, 2001. KORUS '01. Proceedings. The Fifth Russian-Korean International Symposium on  (Volume:1 )

Date of Conference:

26 Jun-3 Jul 2001