Referenced Items are not available for this document.
The degradation of 100-nm effective channel length pMOS transistors with 14 Å equivalent oxide thickness Jet Vapor Deposition (JVD) Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concern. Hot-carrier reliability of 14 Å Si3N4 transistors is compared to reliability of 16 Å SiO2 transistors
Published in:
Device and Materials Reliability, IEEE Transactions on
(Volume:1
,
Issue:
3
)
Date of Publication: Sep 2001
- Page(s):
- 158 - 162
- ISSN :
- 1530-4388
- INSPEC Accession Number:
- 7149933
- Digital Object Identifier :
- 10.1109/7298.974831
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Sep 2001
- Sponsored by :
- IEEE Electron Devices Society
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