Referenced Items are not available for this document.
In this work, we introduce the Spacer/Replacer concept, a new concept to improve the device performance of ultrathin-film fully-depleted (FD) SOI CMOS transistors. High-performance FD SOI CMOS transistors are demonstrated with a silicon film thickness of 30 nm and physical gate-lengths down to 0.1 /spl mu/m. The approach uses selective epitaxial growth of silicon to form raised source/drains while avoiding the simultaneous formation of a T-shaped poly-Si gate. In addition, the introduced concept eases the integration issues related to the ultrathin silicon film.
Published in:
Electron Device Letters, IEEE
(Volume:23
,
Issue:
1
)
Date of Publication: Jan. 2002
- Page(s):
- 46 - 48
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 7157680
- Digital Object Identifier :
- 10.1109/55.974808
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Jan. 2002
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
