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Equivalent cell approach for extraction of the SILC distribution in flash EEPROM cells

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4 Author(s)
Ielmini, D. ; Dipt. di Elettronica e Inf., Politecnico di Milano, Italy ; Spinelli, A.S. ; Lacaita, A.L. ; Modelli, A.

A new method for characterizing the distribution of the stress-induced leakage current (SILC) in flash memories is presented. The statistics of the leakage parameters are extracted directly from the time dependence of the threshold voltage distributions obtained in a single gate-stress experiment, without any need for tracking the behavior of the individual cells. The new technique can be used for fast evaluation and reliability projections, as well as providing a tool for statistical investigation on the oxide leakage mechanisms.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 1 )