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Impact of intrinsic channel resistance on noise performance of CMOS LNA

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2 Author(s)
Jiwei Chen ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Bingxue Shi

Channel resistance cannot be neglected for CMOS circuits that operate at radio frequency (RF), especially for a low noise amplifier (LNA), which is a very important block in CMOS RF transceivers. The impact of channel resistance on the noise performance of an LNA is thoroughly studied and analyzed and new formulas are proposed systematically in this work. Furthermore, a revised noise figure optimization technique is discussed. Simulation results are also proposed. All of this work will be very instructive for the design of high-performance LNA.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 1 )