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Impact of gate-poly grain structure on the gate-oxide reliability [CMOS]

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4 Author(s)
Kamgar, Avid ; New Jersey Inst. of Technol., Newark, NJ, USA ; Vaidya, H.M. ; Baumann, F.H. ; Nakahara, S.

Time dependent dielectric breakdown of thin oxides, 1.5 to 5.0 nm has been studied for different gate-poly grain structures. The poly grain was varied by the poly deposition, and the source-drain (S/D) rapid thermal anneal (RTA) conditions. The study, which was done on fully fabricated CMOS devices, showed substantial reliability degradation in thin gate oxides (below 2.0 nm), when using S/D RTA temperatures above 1000/spl deg/C. The results can be explained in terms of the interface roughness at the gate poly interface induced by the S/D RTA temperature above the viscoelastic point of the SiO/sub 2/. A possible mechanism for the drastic reliability degradation in thin gate oxides, is the protrusion of poly grains into the softening oxide at high temperature.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 1 )

Date of Publication:

Jan. 2002

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