By Topic

Field emission characteristics of CoSi2/TaN-coated silicon emitter tips

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Byung Wook Han ; Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Jae Sin Lee ; Ahn, Byung Tae

This work has improved the emission characteristics of Si emitter tips by coating a CoSi/sub 2//TaN bilayer on the tips. The CoSi/sub 2/ layer was grown in situ by a reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt at 650/spl deg/C. The TaN was then deposited on the CoSi/sub 2/ layer at 550/spl deg/C by a reactive sputtering of Ta with N as a reactive gas. The CoSi/sub 2//TaN-coated emitters showed a lower turn-on voltage and higher emission current than the CoSi/sub 2/- or TaN-coated emitters due to the low work function by TaN and the easy transport of electron by CoSi/sub 2/ with low resistivity. The long-term emission stability of CoSi/sub 2//TaN-coated Si emitter was as good as TaN-coated emitter.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 1 )