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Field emission characteristics of CoSi2/TaN-coated silicon emitter tips

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3 Author(s)
Byung Wook Han ; Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Jae Sin Lee ; Ahn, Byung Tae

This work has improved the emission characteristics of Si emitter tips by coating a CoSi/sub 2//TaN bilayer on the tips. The CoSi/sub 2/ layer was grown in situ by a reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt at 650/spl deg/C. The TaN was then deposited on the CoSi/sub 2/ layer at 550/spl deg/C by a reactive sputtering of Ta with N as a reactive gas. The CoSi/sub 2//TaN-coated emitters showed a lower turn-on voltage and higher emission current than the CoSi/sub 2/- or TaN-coated emitters due to the low work function by TaN and the easy transport of electron by CoSi/sub 2/ with low resistivity. The long-term emission stability of CoSi/sub 2//TaN-coated Si emitter was as good as TaN-coated emitter.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 1 )

Date of Publication:

Jan. 2002

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