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AlGaN/GaN HEMTs on (111) silicon substrates

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8 Author(s)
Javorka, P. ; Inst. of Thin Films & Interfaces (ISG-1), Res. Centre Julich, Germany ; Alam, A. ; Wolter, M. ; Fox, A.
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AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and f/sub max//f/sub T/=0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling /spl sim/16 W/mm static heat dissipation.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 1 )

Date of Publication:

Jan. 2002

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