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This paper presents a closed-form threshold-voltage model for short-channel partially-depleted (PD) SOI dynamic-threshold MOS (DTMOS) devices based on a quasi-two-dimensional (2-D) approach. As verified by experimental data and 2-D simulation results, this compact model provides an accurate prediction of the threshold-voltage behavior of the short-channel PD SOI DTMOS devices. Based on the analytical model, as verified by the 2-D simulation results, PD SOI DTMOS devices have less short-channel effects including DIBL-induced short-channel effects as compared to the devices without the DTMOS configuration
Published in:
Electron Devices, IEEE Transactions on
(Volume:49
,
Issue:
1
)
Date of Publication: Jan 2002
- Page(s):
- 190 - 196
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 7157542
- Digital Object Identifier :
- 10.1109/16.974770
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Jan 2002
- Sponsored by :
- IEEE Electron Devices Society
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