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Ultralow leakage characteristics of ultrathin gate oxides (~3 nm) prepared by anodization followed by high-temperature annealing

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3 Author(s)
Chieh-Chih Ting ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Yen-Hao Shih ; Hwu, Jenn-Gwo

The leakage current of an anodic oxide (ANO) is two orders lower than that of a rapid thermal oxide (RTO) due to the negative oxide trapped charges near the metal-ANO interface. Moreover, the ANO's SILC characteristic is different from the RTO's, since the charges might redistribute under a high electrical stress

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Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 1 )