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A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

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6 Author(s)
Garcia Sanchez, F.J. ; Laboratorio de Electronica del Estado Solido, Univ. Simon Bolivar, Caracas, Venezuela ; Ortiz-Conde, A. ; Cerdeira, A. ; Estrada, M.
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Free-carrier mobility degradation in the channel and drain/source series resistance are two important parameters limiting the performance of MOS devices. In this paper, we present a method to extract these parameters from the drain current versus gate voltage characteristics of fully-depleted (FD) SOI MOSFETs operating in the saturation region. This method is developed based on an integration function which reduces errors associated with the extraction procedure and on the DC characteristics of MOS devices having several different channel lengths. Simulation results and measured data of FD SOI MOSFETs are used to test and verify the method developed

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 1 )

Date of Publication:

Jan 2002

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