By Topic

Microwave performance and modeling of InAs/AlSb/GaSb resonant interband tunneling diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Fay, P. ; Dept. of Electr. Eng., Notre Dame Univ., IN, USA ; Jiang Lu ; Yanyang Xu ; Dame, N.
more authors

The microwave frequency performance of InAs/ AlSb/GaSb resonant interband tunneling diodes has been examined experimentally. A bias-dependent small-signal circuit model that matches the measured data well for the full range of measured frequencies (dc to 35 GHz) and the full range of device biases (0 to 0.5 V) has been obtained. To the author's knowledge, this is the first report of a microwave-frequency circuit model that is valid over the full range of device operating biases, including the negative differential resistance region. The bias dependence of the circuit elements contained within the model is examined, and is consistent with device operational principles

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 1 )