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This paper proposes and demonstrates the extraction of MOSFET threshold voltage, source-drain resistance, gate field mobility reduction factor, and transistor gain factor from the measurement of the small-signal source-drain conductance of a transistor as a function of dc gate bias with zero dc drain bias. The theory is based on the analytical model that includes the effects of source-drain resistance and gate-induced mobility reduction. It is shown that, by measuring devices of different drawn gate lengths, effective channel lengths and actual mobility can also be extracted. The results obtained are compared with those obtained by other measurement methods
Published in:
Electron Devices, IEEE Transactions on
(Volume:48
,
Issue:
12
)
Date of Publication: Dec 2001
- Page(s):
- 2870 - 2874
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 7150235
- Digital Object Identifier :
- 10.1109/16.974720
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Dec 2001
- Sponsored by :
- IEEE Electron Devices Society
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