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A new optoelectronic integrated device for light-amplifying optical switch (LAOS)

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2 Author(s)
Jit, S. ; Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India ; Pal, B.B.

A new optoelectronic integrated device is proposed for a light-amplifying optical switch (LAOS). The device is composed of an optical field-effect transistor (OPFET) in series with a light source which may be either a double heterostructure light-emitting diode (LED) or laser diode (LD). A quantitative circuit model for the proposed LAOS is presented and theoretical investigation is carried out for developing a current-voltage (I-V) relation for the device. It is shown analytically that switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR) when a voltage greater than the breakover voltage is applied

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 12 )