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Metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate: DC and microwave performances

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10 Author(s)
Hong Wang ; Microelectron. Center, Nanyang Technol. Univ., Singapore ; Geok Ing Ng ; Haiqun Zheng ; Hong Yang
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High-performance InP/In0.53Ga0.47As metamorphic heterojunction bipolar transistors (MHBTs) on GaAs substrate have been fabricated using InxGa1-xP strain relief buffer layer grown by solid-source molecular beam epitaxy (SSMBE). The MHBTs exhibited a dc current gain over 100, a unity current gain cutoff frequency (fT) of 48 GHz and a maximum oscillation frequency (fMAX) of 42 GHz with low junction leakage current and high breakdown voltages. It has also been shown that the MHBTs have achieved a minimum noise figure of 2 dB at 2 GHz (devices with 5×5 μm 2 emitter) and a maximum output power of 18 dBm at 2.5 GHz (devices with 5×20 μm2 emitter), which are comparable to the values reported on the lattice-matched HBTs (LHBTs). The dc and microwave characteristics show the great potential of the InP/InGaAs MHBTs on GaAs substrate for high-frequency and high-speed applications

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 12 )

Date of Publication:

Dec 2001

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