Referenced Items are not available for this document.
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, which relies on combining drain current and output conductance characteristics, enables reliable values of the threshold voltage V/sub th/, mobility /spl mu//sub 0/ and the mobility attenuation coefficient /spl theta/ to be obtained. Extracted results have been shown in good agreement with that of the second-derivative method, showing the validity of our presented method.
Published in:
Electron Device Letters, IEEE
(Volume:22
,
Issue:
12
)
Date of Publication: Dec. 2001
- Page(s):
- 597 - 599
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 7150446
- Digital Object Identifier :
- 10.1109/55.974590
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Dec. 2001
- Sponsored by :
- IEEE Electron Devices Society
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