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A new method for the extraction of the MOSFET parameters is presented in this letter. The method, which relies on combining drain current and output conductance characteristics, enables reliable values of the threshold voltage V/sub th/, mobility /spl mu//sub 0/ and the mobility attenuation coefficient /spl theta/ to be obtained. Extracted results have been shown in good agreement with that of the second-derivative method, showing the validity of our presented method.
Date of Publication: Dec. 2001