Referenced Items are not available for this document.
When the gate-oxide of a MOSFET breaks down, a leakage path is created between channel and gate. In this work, we demonstrate that a simple leakage current increase model can predict the impact of gate-oxide breakdown on MOSFET performance from dc to microwave frequency. We show that severe reduction in RF performance due to input/output mismatch and a gain reduction can result from gate-oxide breakdown.
Published in:
Electron Device Letters, IEEE
(Volume:22
,
Issue:
12
)
Date of Publication: Dec. 2001
- Page(s):
- 585 - 587
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 7150442
- Digital Object Identifier :
- 10.1109/55.974585
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Dec. 2001
- Sponsored by :
- IEEE Electron Devices Society
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