By Topic

The impact of postbreakdown gate leakage on MOSFET RF performances

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Pantisano, L. ; IMEC, Leuven, Belgium ; Cheung, K.P.

When the gate-oxide of a MOSFET breaks down, a leakage path is created between channel and gate. In this work, we demonstrate that a simple leakage current increase model can predict the impact of gate-oxide breakdown on MOSFET performance from dc to microwave frequency. We show that severe reduction in RF performance due to input/output mismatch and a gain reduction can result from gate-oxide breakdown.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 12 )