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4H-SiC RF power MOSFETs

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7 Author(s)
D. Alok ; Philips Labs., North American Philips Corp., Briarcliff Manor, NY, USA ; E. Arnold ; R. Egloff ; J. Barone
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A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance. The cut-off frequency of the device with 1-μm gate length was in excess of 7 GHz.

Published in:

IEEE Electron Device Letters  (Volume:22 ,  Issue: 12 )