4H-SiC RF power MOSFETs

A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance. The cut-off frequency of the device with 1-μm gate length was in excess of 7 GHz.