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Suppression of boron penetration in p-channel MOSFETs using polycrystalline Si/sub 1-x-y/GexCy gate layers

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3 Author(s)
Stewart, E.J. ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; Carroll, M.S. ; Sturm, J.C.

Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si/sub 1-x-y/Ge/sub x/C/sub y/ gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si/sub 1-x/Ge gate layers. Boron accumulates in the poly Si/sub 1-x-y/Ge/sub x/C/sub y/ layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si/sub 1-x-y/Ge/sub x/C/sub y/ appears to be electrically active, providing similar device performance compared to the poly Si or poly Si/sub 1-x/Ge/sub x/ gated devices.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 12 )

Date of Publication:

Dec. 2001

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